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Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy
Author(s):
J. P. Gong
,
S. NAKAMURA
,
M. LEONARD
,
Mona M. Bedair
,
N. El‐Masry
,
S Nakamura
,
Salah Bedair
,
M Leonard
Publication date:
1992
Journal:
Journal of Electronic Materials
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Atomic Force Microscopy
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DOI::
10.1007/BF02684204
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