Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

LeGoues, F. K.; Kirchner, P. D.; Meyerson, B. S.; Morar, J. F.

doi:10.1063/1.350803

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Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

Author(s): F. K. LeGoues , B. S. Meyerson , J. F. Morar , P. D. Kirchner

Publication date Created: May 1992

Publication date (Print): May 1992

Journal: Journal of Applied Physics

Publisher: AIP Publishing

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EMS - a software package for electron diffraction analysis and HREM image simulation in materials science

P.A. Stadelmann (1987)

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Defects in epitaxial multilayers

A.E. Blakeslee, J.W. Matthews (1976)

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Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

J. Michel, D. Brasen, A. Kortan … (1991)

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Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: May 1992

Publication date (Print): May 1992

Volume: 71

Issue: 9

Pages: 4230-4243

Article

DOI: 10.1063/1.350803

SO-VID: 4d117819-3dd4-47c6-a7e1-1c42b7da53b2

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Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

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HR-EBSD (High Resolution - Electron Back Scatter Diffraction)

Most cited references 24

EMS - a software package for electron diffraction analysis and HREM image simulation in materials science

Defects in epitaxial multilayers

Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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