Memory applications based on ferroelectric and high-permittivity dielectric thin films

Jones, R.E.; Zurcher, P.; Chu, P.; Taylor, D.J; Lii, Y.T.; Jiang, B.; Maniar, P.D.; Gillespie, S.J.

doi:10.1016/0167-9317(95)00106-9

Record: found
Abstract: not found
Article: not found

Memory applications based on ferroelectric and high-permittivity dielectric thin films

Author(s): R.E. Jones , P. Zurcher , P. Chu , D.J. Taylor , Y.T. Lii , B. Jiang , P.D. Maniar , S.J. Gillespie

Publication date Created: December 1995

Publication date (Print): December 1995

Journal: Microelectronic Engineering

Publisher: Elsevier BV

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Author and article information

Journal

Title: Microelectronic Engineering

Abbreviated Title: Microelectronic Engineering

Publisher: Elsevier BV

ISSN (Print): 01679317

Publication date Created: December 1995

Publication date (Print): December 1995

Volume: 29

Issue: 1-4

Pages: 3-10

Article

DOI: 10.1016/0167-9317(95)00106-9

SO-VID: 4df5bc0a-6e3f-4a43-91ba-0329756cf5bc

License:

https://www.elsevier.com/tdm/userlicense/1.0/

History

Data availability:

Comments

Comment on this article

scite_

Cited by 7

See all cited by

Memory applications based on ferroelectric and high-permittivity dielectric thin films

Read this article at

Related collections

Embodied Memory

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 3,356

Cited by 7