Properties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxy

Oshima, Takayoshi; Fujita, Shizuo

doi:10.1002/pssc.200779297

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Properties of Ga2O3-based (InxGa1-x)2O3alloy thin films grown by molecular beam epitaxy

Author(s): Takayoshi Oshima , Shizuo Fujita

Publication date Created: July 2008

Publication date (Print): July 2008

Journal: physica status solidi (c)

Publisher: Wiley

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Journal ID (publisher-id): PSSC

Title: physica status solidi (c)

Abbreviated Title: phys. stat. sol. (c)

Publisher: Wiley

ISSN (Print): 16101634

ISSN (Electronic): 16101642

Publication date Created: July 2008

Publication date (Print): July 2008

Volume: 5

Issue: 9

Pages: 3113-3115

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DOI: 10.1002/pssc.200779297

SO-VID: 4e5256d1-b3f6-46fe-8f75-66e0d81946b4

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http://doi.wiley.com/10.1002/tdm_license_1.1

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