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Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4
Author(s):
M. L. Green
,
Y. S. Ali
,
D. Brasen
,
S. Nakahara
Publication date
Created:
May 1988
Publication date
(Print):
May 1988
Journal:
Journal of Electronic Materials
Publisher:
Springer Nature
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Article
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Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing
Julia Phillips
,
Mary L. Manger
,
Loren Pfeiffer
…
(1985)
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Author and article information
Journal
Title:
Journal of Electronic Materials
Abbreviated Title:
JEM
Publisher:
Springer Nature
ISSN (Print):
0361-5235
ISSN (Electronic):
1543-186X
Publication date Created:
May 1988
Publication date (Print):
May 1988
Volume
: 17
Issue
: 3
Pages
: 229-237
Article
DOI:
10.1007/BF02652183
SO-VID:
4e8f3aac-60f6-4c8e-b509-a40243880da0
Copyright ©
© 1988
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