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      Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4

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      Journal of Electronic Materials
      Springer Nature

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          Improving the Structural and Electrical Properties of Epitaxial CaF2 on Si By Rapid Thermal Anneaing

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            Author and article information

            Journal
            Journal of Electronic Materials
            JEM
            Springer Nature
            0361-5235
            1543-186X
            May 1988
            May 1988
            : 17
            : 3
            : 229-237
            Article
            10.1007/BF02652183
            4e8f3aac-60f6-4c8e-b509-a40243880da0
            © 1988
            History

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