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Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

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      Most cited references 38

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      Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

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        Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

         J. C. Bean,  R. People (1985)
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          GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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            Author and article information

            Journal
            IEEE Journal of Quantum Electronics
            IEEE J. Quantum Electron.
            Institute of Electrical and Electronics Engineers (IEEE)
            0018-9197
            September 1986
            September 1986
            : 22
            : 9
            : 1696-1710
            10.1109/JQE.1986.1073152
            © 1986
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