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      Dual beam organic depth profiling using large argon cluster ion beams

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          Abstract

          Argon cluster sputtering of an organic multilayer reference material consisting of two organic components, 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl (NPB) and aluminium tris-(8-hydroxyquinolate) (Alq 3), materials commonly used in organic light-emitting diodes industry, was carried out using time-of-flight SIMS in dual beam mode. The sample used in this study consists of a ∽400-nm-thick NPB matrix with 3-nm marker layers of Alq 3 at depth of ∽50, 100, 200 and 300 nm. Argon cluster sputtering provides a constant sputter yield throughout the depth profiles, and the sputter yield volumes and depth resolution are presented for Ar-cluster sizes of 630, 820, 1000, 1250 and 1660 atoms at a kinetic energy of 2.5 keV. The effect of cluster size in this material and over this range is shown to be negligible. © 2014 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd.

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          Exploring the surface sensitivity of TOF-secondary ion mass spectrometry by measuring the implantation and sampling depths of Bi(n) and C60 ions in organic films.

          Robert Brison, S Muramoto, David G Castner (2012)
          The surface sensitivity of Bi(n)(q+) (n = 1, 3, 5, q = 1, 2) and C(60)(q+) (q = 1, 2) primary ions in static time-of-flight secondary ion mass spectrometry (TOF-SIMS) experiments were investigated for molecular trehalose and polymeric tetraglyme organic films. Parameters related to surface sensitivity (impact crater depth, implantation depth, and molecular escape depths) were measured. Under static TOF-SIMS conditions (primary ion doses of 1 × 10(12) ions/cm(2)), the 25 keV Bi(1)(+) primary ions were the most surface sensitive with a molecular escape depth of 1.8 nm for protein films with tetraglyme overlayers, but they had the deepest implantation depth (~18 and 26 nm in trehalose and tetraglyme films, respectively). The 20 keV C(60)(+2) primary ions were the second most surface sensitive with a slightly larger molecular escape depth of 2.3 nm. The most important factor that determined the surface sensitivity of the primary ion was its impact crater depth or the amount of surface erosion. The most surface sensitive primary ions, Bi(1)(+) and C(60)(+2), created impact craters with depths of 0.3 and 1.0 nm, respectively, in tetraglyme films. In contrast, Bi(5)(+2) primary ions created impact craters with a depth of 1.8 nm in tetraglyme films and were the least surface sensitive with a molecular escape depth of 4.7 nm. © 2011 American Chemical Society
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            Molecular depth-profiling of polycarbonate with low-energy Cs+ ions.

            Nicolas Mine, Bastien Douhard, Jeremy Brison … (2007)
            In this work, we explored the possibility of performing molecular depth-profiling by using very low-energy (about 200 eV) monoatomic Cs(+) ions. We show, for the first time, that this simple approach is successful on polymer layers of polycarbonate (PC). Under 200 eV Cs(+) irradiation of PC, a fast decrease of all characteristic negatively charged molecular ion signals is first observed but, rather surprisingly, these signals reach a minimum before rising again. A steady state is reached at which time most specific PC fragments are detected, some with even higher signal intensity (e.g. C(6)H(5)O(-)) than before irradiation. It is believed that the implanted Cs plays a major role in enhancing the negative ionisation of molecular fragments, leading to their easy detection for all the profile, although some material degradation obviously occurs. In the positive ion mode, all molecular fragments of the polymer disappear very rapidly, but clusters combining two Cs atoms and one molecular fragment (e.g. Cs(2)C(6)H(5)O(+)) are detected during the profile, proving that some molecular identification remains possible. In conclusion, this work presents a simple approach to molecular depth-profiling, complementary to cluster ion beam sputtering.
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              Comparative study of the usefulness of low energy Cs(+), Xe(+), and O(2)(+) ions for depth profiling amino-acid and sugar films.

              Nimer Wehbe, Laurent Houssiau (2010)
              This work reports a comparative study on the capability of low energy primary ion beams for depth profiling nonpolymeric molecules including amino-acid and sugar layers. Due to their different behavior regarding depth profiling, phenylalanine and trehalose molecules are chosen as reference systems. Each molecule was dissolved in suitable solvent prior to spin-coating on clean silicon wafer. The film thicknesses were in the order of 70 and 100 nm for phenylalanine and trehalose respectively. Depth profiling feasibility were assessed first using Cs(+) as reactive sputtering ion at various energies. The results obtained under Cs(+) sputtering ions are compared afterward to those obtained under Xe(+) sputtering ions which are inert and have a mass very similar to Cs(+). In order to investigate the effect of oxygen, depth profiling are also performed using either Xe(+) under oxygen flooding or O(2)(+) as sputtering ions. While phenylalanine could be depth profiled successfully using Cs(+) ions, Xe(+) and O(2)(+) ions failed to retain any characteristic signal. The sputtering yields measured as a function of the ion beam energies were higher using Cs(+), in particular at low energies. The chemical reactivity of the cesium atoms being implanted during the sputtering process helps to prevent the loss of the molecular phenylalanine signal. In contrast, depth profiling of trehalose was more successful upon Xe(+) and O(2)(+) compared to Cs(+). In this case the sputtering yields were higher if Xe(+) primary ion is employed instead of Cs(+). The different trends observed in this study are interpreted using arguments involving the reactivity of the sputtering ions.
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                Author and article information

                Journal
                Journal ID (nlm-ta): Surf Interface Anal
                Journal ID (iso-abbrev): Surf Interface Anal
                Journal ID (publisher-id): sia
                Title: Surface and Interface Analysis
                Publisher: BlackWell Publishing Ltd (Oxford, UK )
                ISSN (Print): 0142-2421
                ISSN (Electronic): 1096-9918
                Publication date (Print): Oct-Nov 2014
                Publication date (Electronic): 18 March 2014
                Volume: 46
                Issue: 10-11
                Pages: 936-939
                Affiliations
                [a ]BAM – Federal Institute for Material Science and Testing, Division of Surface Analysis and Interfacial Chemistry Unter den Eichen 44-46, 12205, Berlin, Germany
                [b ]National Physical Laboratory Hampton Road, Teddington, TW11 0LW, UK
                [c ]BfR – Federal Institute for Risk Assessment, Department of Experimental Research Max Dohrn Strasse 8-10, 10589, Berlin, Germany
                Author notes
                Correspondence to: M. Holzweber, BAM – Federal Institute for Material Science and Testing, Division of Surface Analysis and Interfacial Chemistry, Unter den Eichen 44-46, 12205 Berlin, Germany., E-mail: markus.holzweber@ 123456bam.de
                Article
                DOI: 10.1002/sia.5429
                PMC ID: 4376248
                SO-VID: 4fd22b90-a81a-4e9a-810f-f481088cbfcf
                Copyright © Copyright © 2014 John Wiley & Sons, Ltd.
                License:

                This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

                History
                Date received : 01 September 2013
                Date revision received : 31 January 2014
                Date accepted : 03 February 2014
                Categories
                Subject: Ecasia Special Issue Papers

                Keywords: sims,organic depth profiling,argon cluster,tof-sims,ar-gcib
                Data availability:
                Keywords: sims, organic depth profiling, argon cluster, tof-sims, ar-gcib

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