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      7262. Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology

      Vacuum
      Elsevier BV

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          Author and article information

          Journal
          Vacuum
          Vacuum
          Elsevier BV
          0042207X
          January 1991
          January 1991
          : 42
          : 8-9
          : 577-578
          Article
          10.1016/0042-207X(91)91069-Z
          500ede30-f1cd-413e-9eef-efedf0c0aad3
          © 1991

          https://www.elsevier.com/tdm/userlicense/1.0/

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