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Abstract
We report on the fabrication and measurement of nanoscale devices that permit electrostatic
confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched
between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned
such that constrictions and islands can be electrostatically induced. The high quality
of the devices becomes apparent from the smooth pinch-off characteristics of the constrictions
at low temperature with features indicative of conductance quantization. The islands
exhibit clear Coulomb blockade and single-electron transport.