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      A model for the formation of amorphous Si by ion bombardment

      Author(s): ,
      Publication date Created:
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      Journal: Radiation Effects
      Publisher: Informa UK Limited

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          Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

          J. Davies, S T Picraux, L Eriksson … (1968)
          Article 0 comments Cited 104 times – based on 0 reviews     Review now
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            Ion implantation in semiconductors—Part I: Range distribution theory and experiments

            J.F. Gibbons (1968)
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              ESR AND OPTICAL ABSORPTION STUDIES OF ION‐IMPLANTED SILICON

              R. S. Title, B. Crowder, G Pettit … (1970)
              Article 0 comments Cited 66 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Radiation Effects
                Abbreviated Title: Radiation Effects
                Publisher: Informa UK Limited
                ISSN (Print): 0033-7579
                Publication date Created: September 13 2006
                Publication date (Print): September 13 2006
                Volume: 6
                Issue: 1
                Pages: 27-32
                Article
                DOI: 10.1080/00337577008235042
                SO-VID: 51e8a930-41b1-4671-8cd9-b6901fecf9ec
                Copyright © © 2006
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