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      Mapping Catalytically Relevant Edge Electronic States of MoS 2

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          Abstract

          Molybdenum disulfide (MoS 2) is a semiconducting transition metal dichalcogenide that is known to be a catalyst for both the hydrogen evolution reaction (HER) as well as for hydro-desulfurization (HDS) of sulfur-rich hydrocarbon fuels. Specifically, the edges of MoS 2 nanostructures are known to be far more catalytically active as compared to unmodified basal planes. However, in the absence of the precise details of the geometric and electronic structure of the active catalytic sites, a rational means of modulating edge reactivity remain to be developed. Here we demonstrate using first-principles calculations, X-ray absorption spectroscopy, as well as scanning transmission X-ray microscopy (STXM) imaging that edge corrugations yield distinctive spectroscopic signatures corresponding to increased localization of hybrid Mo 4d states. Independent spectroscopic signatures of such edge states are identified at both the S L 2,3 and S K-edges with distinctive spatial localization of such states observed in S L 2,3-edge STXM imaging. The presence of such low-energy hybrid states at the edge of the conduction band is seen to correlate with substantially enhanced electrocatalytic activity in terms of a lower Tafel slope and higher exchange current density. These results elucidate the nature of the edge electronic structure and provide a clear framework for its rational manipulation to enhance catalytic activity.

          Abstract

          Low-energy hybrid states at the bottom of the conduction band of MoS 2 thought to be involved in catalytic hydrogen evolution and hydro-desulfurization are spectrally distinguished and mapped, suggesting strong localization at the edges.

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          Generalized Gradient Approximation Made Simple

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            Is Open Access

            Electric Field Effect in Atomically Thin Carbon Films

            We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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              Atomically thin MoS2: A new direct-gap semiconductor

              The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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                Author and article information

                Journal
                ACS Cent Sci
                ACS Cent Sci
                oc
                acscii
                ACS Central Science
                American Chemical Society
                2374-7943
                2374-7951
                03 April 2018
                25 April 2018
                : 4
                : 4
                : 493-503
                Affiliations
                []Department of Chemistry and Department of Materials Science and Engineering, Texas A&M University , College Station, Texas 77845-3012, United States
                [22] Molecular Foundry and §Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
                [# ]Department of Chemistry, Texas A&M University at Qatar , P.O. Box 23874, Doha, Qatar
                Author notes
                [* ](D.P.) E-mail: dgprendergast@ 123456lbl.gov .
                [* ](S.B.) E-mail: banerjee@ 123456chem.tamu.edu .
                Article
                10.1021/acscentsci.8b00042
                5920619
                29721532
                526a1533-3aee-4b3e-9197-2b82cce8fe5f
                Copyright © 2018 American Chemical Society

                This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.

                History
                : 16 January 2018
                Categories
                Research Article
                Custom metadata
                oc8b00042
                oc-2018-00042f

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