Preparation and characterization of silicon nanowires using SEM/FIB and TEM

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Abstract

Due to the electronic and structural properties of silicon, silicon nanowires have a great potential in nanoscale electronic devices and sensors. Silicon nanowires used for reconfigurable field effect transistors are designed, synthesized and characterized after each step in order to ensure excellent electrical and physical properties of the end product and to study various process parameters. In this study, silicon nanowire based reconfigurable field effect transistors are studied as as-grown “forests”, individually, oxidized and after forming Schottky junctions. The analysis is performed using scanning electron microscopy and transmission electron microscopy. Focused ion beam based preparation was carried out in the case of samples with Schottky junctions. This paper provides a comprehensive description of sample preparation and characterization of the nanowires.

Most cited references 10

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Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures.

Yue Wu, Jie Xiang, Chen Yui Yang … (2004)

Substantial effort has been placed on developing semiconducting carbon nanotubes and nanowires as building blocks for electronic devices--such as field-effect transistors--that could replace conventional silicon transistors in hybrid electronics or lead to stand-alone nanosystems. Attaching electric contacts to individual devices is a first step towards integration, and this step has been addressed using lithographically defined metal electrodes. Yet, these metal contacts define a size scale that is much larger than the nanometre-scale building blocks, thus limiting many potential advantages. Here we report an integrated contact and interconnection solution that overcomes this size constraint through selective transformation of silicon nanowires into metallic nickel silicide (NiSi) nanowires. Electrical measurements show that the single crystal nickel silicide nanowires have ideal resistivities of about 10 microOmega cm and remarkably high failure-current densities, >10(8) A cm(-2). In addition, we demonstrate the fabrication of nickel silicide/silicon (NiSi/Si) nanowire heterostructures with atomically sharp metal-semiconductor interfaces. We produce field-effect transistors based on those heterostructures in which the source-drain contacts are defined by the metallic NiSi nanowire regions. Our approach is fully compatible with conventional planar silicon electronics and extendable to the 10-nm scale using a crossed-nanowire architecture.

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Silicon-nanowire transistors with intruded nickel-silicide contacts.

Henning Riechert, Maik Liebau, Ronald Unger … (2006)

Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.

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Silicon nanowires - a versatile technology platform

Thomas Mikolajick, André Heinzig, Jens Trommer … (2013)

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Author and article information

Journal

Journal ID (publisher-id): ijmr

Title: International Journal of Materials Research

Publisher: Carl Hanser Verlag

ISSN (Print): 1862-5282

ISSN (Electronic): 2195-8556

Publication date (Print): 4 July 2015

Volume: 106

Issue: 7

Pages: 697-702

Affiliations

^a Technische Universität Dresden, Center for Advancing Electronics Dresden (cfaed), Germany

^b Technische Universität Dresden, Dresden Center for Nanoanalysis (DCN), Dresden, Germany

^c Fraunhofer-Institute for Ceramic Technology and Systems-Materials Diagnostics, Dresden, Germany

^d Technische Universität Dresden, Institute for Materials Science, Dresden, Germany

^e NaMLab gGmbH, Dresden, Germany

Author notes

[* ] Correspondence address, Sayanti Banerjee, MSc, Technische Universität Dresden, Dresden Center for Nanoanalysis, 01069 Dresden, Germany, Tel.: +49 351 463 35452, Fax: +49 351 463 31985, E-mail: Sayanti.Banerjee@ 123456TU-Dresden.de

Article

Publisher ID: MK111249

DOI: 10.3139/146.111249

SO-VID: 52988093-c1a4-4d1a-8d53-32f0af27eaa8

History

Date received : 30 October 2014

Date accepted : 16 March 2015

Date: 30 April 2015

Page count

References: 11, Pages: 6

Preparation and characterization of silicon nanowires using SEM/FIB and TEM : Paper presented at “XV International Conference on Electron Microscopy”, 15–18 September 2014, Cracow, Poland

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