Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

Kessels, W. M. M.; van de Sanden, M. C. M.; Altermatt, P. P.; Bock, R.; Schmidt, J.; Hoex, B.

doi:10.1063/1.2784168

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Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

Author(s): B. Hoex , J. Schmidt , R. Bock , P. P. Altermatt , M. C. M. van de Sanden , W. M. M. Kessels

Publication date Created: September 10 2007

Publication date (Print): September 10 2007

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Andrés Cuevas, Ronald A. Sinton (1996)

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Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

B. Hoex, S. Heil, E. Langereis … (2006)

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General parameterization of Auger recombination in crystalline silicon

Andrés Cuevas, Mark J. Kerr (2002)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: September 10 2007

Publication date (Print): September 10 2007

Volume: 91

Issue: 11

Page: 112107

Article

DOI: 10.1063/1.2784168

SO-VID: 52b4e277-3cc7-4113-9796-a3a6ad8d24b5

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Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

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Negative Pressure Wound Therapy

Most cited references 11

Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

General parameterization of Auger recombination in crystalline silicon

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