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      Wafer-scale synthesis and transfer of graphene films

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          Abstract

          We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

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          Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

          When electrons are confined in two-dimensional (2D) materials, quantum mechanically enhanced transport phenomena, as exemplified by the quantum Hall effects (QHE), can be observed. Graphene, an isolated single atomic layer of graphite, is an ideal realization of such a 2D system. Here, we report an experimental investigation of magneto transport in a high mobility single layer of graphene. Adjusting the chemical potential using the electric field effect, we observe an unusual half integer QHE for both electron and hole carriers in graphene. Vanishing effective carrier masses is observed at Dirac point in the temperature dependent Shubnikov de Haas oscillations, which probe the 'relativistic' Dirac particle-like dispersion. The relevance of Berry's phase to these experiments is confirmed by the phase shift of magneto-oscillations, related to the exceptional topology of the graphene band structure.
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            Raman Studies of Monolayer Graphene: The Substrate Effect

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              Transfer printing of graphene using gold film.

              We report a facile transfer printing process for easily exfoliating prepatterned graphene from HOPG surfaces by using gold film as the transfer stamp. The transferred printed patterns consist of single- and few-layer graphene with macroscopic continuity. Raman spectra show that some defects appear along the edges of the graphene patterns, which were induced by the oxygen plasma-etching treatment of the HOPG surface. This transfer-printing technique paves a new and simple way to get large-scale graphene patterns on to any substrates.
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                Author and article information

                Journal
                26 October 2009
                Article
                10.1021/nl903272n
                20044841
                0910.4783
                5482d416-1a41-44be-a571-a12d06b520c6

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Nano Lett. 10 490-493 (2010)
                18 pages
                cond-mat.mtrl-sci

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