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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
February 03 1986
February 03 1986
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Most cited references6
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Mechanism of Yellow Luminescence in GaN
Toshio Ogino, Masaharu Aoki (1980)
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Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
S. Yoshida, S Misawa, S Gonda (1983)
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Electrical properties of n-type vapor-grown gallium nitride
M. Ilegems, H.C. Montgomery (1973)