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Orientation effects on doping profiles in gallium arsenide implanted with selenium
Author(s):
T. Inada
,
T. Sugiyama
Publication date
Created:
November 1981
Publication date
(Print):
November 1981
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
L Csepregi
,
E. F. Kennedy
,
J. Mayer
…
(1978)
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Reordering of implanted amorphous layers in gaas
J. Mayer
,
T Inada
,
C Rhodes
…
(1977)
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Selenium implantation in GaAs
J.W. Mayer
,
K Gamo
,
T Inada
…
(1977)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
November 1981
Publication date (Print):
November 1981
Volume
: 52
Issue
: 11
Pages
: 6986-6988
Article
DOI:
10.1063/1.328662
SO-VID:
5596a503-2cdf-43af-943e-e3e6100aec74
Copyright ©
© 1981
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