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      • Record: found
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      cw degradation at 300°K of GaAs double‐heterostructure junction lasers. II. Electronic gain

      Author(s): ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

          M. Sturge (1962)
          Article 0 comments Cited 403 times – based on 0 reviews     Review now
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            Gain-current relation for GaAs lasers with n-type and undoped active layers

            F. Stern (1973)
            Article 0 comments Cited 79 times – based on 0 reviews     Review now
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              DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASER

              C Lanza, K. Konnerth (1964)
              Article 0 comments Cited 57 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: September 1973
                Publication date (Print): September 1973
                Volume: 44
                Issue: 9
                Pages: 4113-4119
                Article
                DOI: 10.1063/1.1662905
                SO-VID: 56018a9b-5c59-4b71-9f22-5d79294a6aeb
                Copyright © © 1973
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