17
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Spins in few-electron quantum dots

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references146

          • Record: found
          • Abstract: found
          • Article: not found

          Making nonmagnetic semiconductors ferromagnetic

          Ohno (1998)
          REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Quantized conductance of point contacts in a two-dimensional electron gas

              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              Single spin detection by magnetic resonance force microscopy.

              Magnetic resonance imaging (MRI) is well known as a powerful technique for visualizing subsurface structures with three-dimensional spatial resolution. Pushing the resolution below 1 micro m remains a major challenge, however, owing to the sensitivity limitations of conventional inductive detection techniques. Currently, the smallest volume elements in an image must contain at least 10(12) nuclear spins for MRI-based microscopy, or 10(7) electron spins for electron spin resonance microscopy. Magnetic resonance force microscopy (MRFM) was proposed as a means to improve detection sensitivity to the single-spin level, and thus enable three-dimensional imaging of macromolecules (for example, proteins) with atomic resolution. MRFM has also been proposed as a qubit readout device for spin-based quantum computers. Here we report the detection of an individual electron spin by MRFM. A spatial resolution of 25 nm in one dimension was obtained for an unpaired spin in silicon dioxide. The measured signal is consistent with a model in which the spin is aligned parallel or anti-parallel to the effective field, with a rotating-frame relaxation time of 760 ms. The long relaxation time suggests that the state of an individual spin can be monitored for extended periods of time, even while subjected to a complex set of manipulations that are part of the MRFM measurement protocol.
                Bookmark

                Author and article information

                Journal
                RMPHAT
                Reviews of Modern Physics
                Rev. Mod. Phys.
                American Physical Society (APS)
                0034-6861
                1539-0756
                October 2007
                October 1 2007
                : 79
                : 4
                : 1217-1265
                Article
                10.1103/RevModPhys.79.1217
                563805e6-bb4d-4bec-a613-b19741c52d0b
                © 2007

                http://link.aps.org/licenses/aps-default-license

                History

                Comments

                Comment on this article