Studies of spin related processes in fullerene C60 devices

Author(s): Haoliang Liu ¹ ^, ² ^, ³ ^, ⁴ , Jingying Wang ¹ ^, ² ^, ³ ^, ⁴ , Matthew Groesbeck ¹ ^, ² ^, ³ ^, ⁴ , Xin Pan ¹ ^, ² ^, ³ ^, ⁴ , Chuang Zhang ¹ ^, ² ^, ³ ^, ⁴ , Z. Valy Vardeny ¹ ^, ² ^, ³ ^, ⁴

Publication date (Electronic): 2018

Journal: Journal of Materials Chemistry C

Publisher: Royal Society of Chemistry (RSC)

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Abstract

We have investigated spin related processes in fullerene C ₆₀ devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C ₆₀-based diodes; spin polarized carrier injection in C ₆₀-based spin-valves; and pure spin current generation in NiFe/C ₆₀/Pt trilayer devices.

Abstract

We have investigated spin related processes in fullerene C ₆₀ devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C ₆₀-based diodes; spin polarized carrier injection in C ₆₀-based spin-valves; and pure spin current generation in NiFe/C ₆₀/Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C ₆₀ plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C ₆₀ diodes are dominated by the difference in the g-values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C ₆₀ spin-valve devices, where spin polarized holes are injected into the C ₆₀ interlayer. In addition, using the technique of spin-pumping in NiFe/C ₆₀/Pt trilayer devices with various C ₆₀ interlayer thicknesses we determined the spin diffusion length in C ₆₀ films to be 13 ± 2 nm at room temperature.