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      Voltage-Pulse-Induced Switching Dynamics in \(\hbox{VO}_{2}\) Thin-Film Devices on Silicon

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          Most cited references 13

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          Memory Metamaterials

           ,  ,   (2010)
          The resonant elements that grant metamaterials their unique properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically-controlled persistent frequency tuning of a metamaterial, allowing lasting modification of its response using a transient stimulus. This work demonstrates a form of memory capacitance which interfaces metamaterials with a class of devices known collectively as memory devices.
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            Observation of Mott Transition in VO_2 Based Transistors

            An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018% into the conduction band. As a result, a discontinuous jump of the density of states on the Fermi surface is observed and inhomogeneity inevitably occurs. The gate effect in fabricated transistors is clear evidence that the abrupt MIT is induced by the excitation of holes.
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              Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials

              Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure or compositional variations. An important potential advantage of nanoscale samples is that they exhibit the homogeneous properties, which can differ greatly from those of the bulk. We demonstrate this principle using vanadium dioxide, which has domain structure associated with its dramatic MIT at 68 degrees C. Our studies of single-domain vanadium dioxide nanobeams reveal new aspects of this famous MIT, including supercooling of the metallic phase by 50 degrees C; an activation energy in the insulating phase consistent with the optical gap; and a connection between the transition and the equilibrium carrier density in the insulating phase. Our devices also provide a nanomechanical method of determining the transition temperature, enable measurements on individual metal-insulator interphase walls, and allow general investigations of a phase transition in quasi-one-dimensional geometry.
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                Author and article information

                Journal
                IEEE Electron Device Letters
                IEEE Electron Device Lett.
                Institute of Electrical and Electronics Engineers (IEEE)
                0741-3106
                1558-0563
                November 2011
                November 2011
                : 32
                : 11
                : 1582-1584
                10.1109/LED.2011.2163922
                © 2011
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