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      High mobility approaching the intrinsic limit in Ta-doped SnO 2 films epitaxially grown on TiO 2 (001) substrates

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          Abstract

          Achieving high mobility in SnO 2, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO 2 (Sn 1− x Ta x O 2, TTO) thin films epitaxially grown on TiO 2 (001) substrates by pulsed laser deposition. The carrier density ( n e) of the TTO films was systematically controlled by x. Optimized TTO ( x = 3 × 10 −3) films with n e ~ 1 × 10 20 cm −3 exhibited a very high Hall mobility ( μ H) of 130 cm 2V −1s −1 at room temperature, which is the highest among SnO 2 films thus far reported. The μ H value coincided well with the intrinsic limit of μ H calculated on the assumption that only phonon and ionized impurities contribute to the carrier scattering. The suppressed grain-boundary scattering might be explained by the reduced density of the {101} crystallographic shear planes.

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          VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

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            Past achievements and future challenges in the development of optically transparent electrodes

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              Metal oxides for optoelectronic applications

              Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
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                Author and article information

                Contributors
                nakao@chem.s.u-tokyo.ac.jp
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                22 April 2020
                22 April 2020
                2020
                : 10
                : 6844
                Affiliations
                [1 ]ISNI 0000 0001 2151 536X, GRID grid.26999.3d, Department of Chemistry, , The University of Tokyo, ; 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8654 Japan
                [2 ]Kanagawa Institute of Industrial Science and Technology (KISTEC), 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435 Japan
                [3 ]ISNI 0000 0001 2179 2105, GRID grid.32197.3e, Laboratory for Materials and Structures, Tokyo Institute of Technology, ; 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503 Japan
                [4 ]ISNI 0000 0001 0550 2980, GRID grid.472131.2, Tokyo Metropolitan Industrial Technology Research Institute (TIRI), ; 2-4-10 Aomi, Koto-ku Tokyo, 135-0064 Japan
                Article
                63800
                10.1038/s41598-020-63800-3
                7176643
                32321972
                57cb2d4e-5e22-46c9-8a8a-89d633f9d391
                © The Author(s) 2020

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 7 October 2019
                : 1 April 2020
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                © The Author(s) 2020

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                electronic devices,electronic materials
                Uncategorized
                electronic devices, electronic materials

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