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Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

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Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si) solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si) thin film formed by plasma enhanced chemical vapor deposition (PECVD) and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature) are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON) scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc) by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2) n-type Czochralski (Cz) Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

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Most cited references 18

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N-type silicon solar cells with implanted emitter

Author and article information

[1] Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA 30332-0250, USA
[2] Suniva Inc., 5765 Peachtree Industrial Blvd., Norcross, GA 30092, USA
Author notes
Yuguo Tao, Email:; Tel: +1 404-385-8340; Fax: +1 404-894-4832
AIMS Materials Science
AIMS Materials Science
AIMS Materials Science
AIMS Materials Science
AIMS Press
26 January 2016
: 3
: 1
: 180-189
Research article
ScienceOpen disciplines:


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