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      Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

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      Applied Physics Letters
      AIP Publishing

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          Electronic analog of the electro-optic modulator

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            Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals.

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              Is Open Access

              Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

              We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 19 2007
                November 19 2007
                : 91
                : 21
                : 212109
                Article
                10.1063/1.2817747
                5893ee69-5cce-471a-a736-66f2c51fe801
                © 2007
                History

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