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      Dislocation nucleation near the critical thickness in GeSi/Si strained layers

      , , , ,
      Philosophical Magazine A
      Informa UK Limited

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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            GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

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              Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

              R. People (1986)
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                Author and article information

                Journal
                Philosophical Magazine A
                Philosophical Magazine A
                Informa UK Limited
                0141-8610
                1460-6992
                August 20 2006
                August 20 2006
                : 59
                : 5
                : 1059-1073
                Article
                10.1080/01418618908209837
                58fc0b77-ed7b-4f7c-86ac-e8d38fa2f792
                © 2006
                History

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