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      Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission

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          Abstract

          The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localization signatures in their optical characteristics i.e. red shift of the emission, s-shaped temperature dependence and linewidth broadening. Despite these alloy fluctuations, the emission energy of AlGaN/AlN NDs can be tuned in the 240-350 nm range with internal quantum efficiencies around 30%.

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          Band parameters for nitrogen-containing semiconductors

          I Vurgaftman, J R Meyer (2003)
          Article 0 comments Cited 511 times – based on 0 reviews     Review now
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            A gallium nitride single-photon source operating at 200 K.

            Yoshihisa Yamamoto, Yasuhiko Arakawa, Stephan Götzinger … (2006)
            Fundamentally secure quantum cryptography has still not seen widespread application owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot structures have recently shown great promise as practical single-photon sources, and devices with integrated optical cavities and electrical-carrier injection have already been demonstrated. However, a significant obstacle for the application of commonly used III-V quantum dots to quantum-information-processing schemes is the requirement of liquid-helium cryogenic temperatures. Epitaxially grown gallium nitride quantum dots embedded in aluminium nitride have the potential for operation at much higher temperatures. Here, we report triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling. Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources.
            Article 0 comments Cited 106 times – based on 0 reviews     Review now
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              Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

              Hans Lüth, T Stoica, Asim Debnath … (2007)
              GaN nanowires (NWs) have been grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The nucleation process of GaN-NWs has been investigated in terms of nucleation density and wire evolution with time for a given set of growth parameters. The wire density increases rapidly with time and then saturates. The growth period until the nucleation of new nanowires is terminated can be defined as the nucleation stage. Coalescence of closely spaced nanowires reduces the density for long deposition times. The average size of the well-nucleated NWs shows linear time dependence in the nucleation stage. High-resolution transmission electron microscopy measurements of alternating GaN and AlN layers give valuable information about the length and radial growth rates for GaN and AlN in NWs.
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                Author and article information

                Journal
                Publication date Created: 12 September 2014
                Article
                DOI: 10.1063/1.4904989
                ArXiV ID: 1409.3683
                SO-VID: 5a8827ff-924b-4f72-acbf-638c7257e013
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                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Categories cond-mat.mtrl-sci

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