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      A Universal Critical Density Underlying the Physics of Electrons at the LaAlO3/SrTiO3 Interface

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          Abstract

          The two-dimensional electron system formed at the interface between the insulating oxides LaAlO3 and SrTiO3 exhibits ferromagnetism, superconductivity, and a wide range of unique magnetotransport properties. A key challenge is to find a unified microscopic mechanism that underlies these emergent phenomena. Here we show that a universal Lifshitz transition between d-orbitals lies at the core of the observed transport phenomena in this system. Our measurements find a critical electronic density at which the transport switches from single to multiple carriers. This density has a universal value, independent of the LaAlO3 thickness and electron mobility. The characteristics of the transition, its universality, and its compatibility with spectroscopic measurements establish it as a transition between d-orbitals of different symmetries. A simple band model, allowing for spin-orbit coupling at the atomic level, connects the observed universal transition to a range of reported magnetotransport properties. Interestingly, we also find that the maximum of the superconducting transition temperature occurs at the same critical transition, indicating a possible connection between the two phenomena. Our observations demonstrate that orbital degeneracies play an important role in the fascinating behavior observed so far in these oxides.

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          Why Some Interfaces Cannot be Sharp

          A central goal of modern materials physics and nanoscience is control of materials and their interfaces to atomic dimensions. For interfaces between polar and non-polar layers, this goal is thwarted by a polar catastrophe that forces an interfacial reconstruction. In traditional semiconductors this reconstruction is achieved by an atomic disordering and stoichiometry change at the interface, but in multivalent oxides a new option is available: if the electrons can move, the atoms don`t have to. Using atomic-scale electron energy loss spectroscopy we find that there is a fundamental asymmetry between ionically and electronically compensated interfaces, both in interfacial sharpness and carrier density. This suggests a general strategy to design sharp interfaces, remove interfacial screening charges, control the band offset, and hence dramatically improving the performance of oxide devices.
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            Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface

            LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interface between them exhibits a two-dimensional electron system with high electron mobility,1 superconductivity at low temperatures,2-6 and electric-field-tuned metal-insulator and superconductorinsulator phase transitions.3,6-8 Bulk magnetization and magnetoresistance measurements also suggest some form of magnetism depending on preparation conditions5,9-11 and suggest a tendency towards nanoscale electronic phase separation.10 Here we use local imaging of the magnetization and magnetic susceptibility to directly observe a landscape of ferromagnetism, paramagnetism, and superconductivity. We find submicron patches of ferromagnetism in a uniform background of paramagnetism, with a nonuniform, weak diamagnetic superconducting susceptibility at low temperature. These results demonstrate the existence of nanoscale phase separation as suggested by theoretical predictions based on nearly degenerate interface sub-bands associated with the Ti orbitals.12,13 The magnitude and temperature dependence of the paramagnetic response suggests that the vast majority of the electrons at the interface are localized, and do not contribute to transport measurements.3,6,7 In addition to the implications for magnetism, the existence of a 2D superconductor at an interface with highly broken inversion symmetry and a ferromagnetic landscape in the background suggests the potential for exotic superconducting phenomena.
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              Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

              As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.
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                Author and article information

                Journal
                10 October 2011
                Article
                10.1038/ncomms2116
                1110.2184
                5a90975d-74f3-4277-bf7b-88d5d10b903d

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                Nat. Commun., 3:1129 (2012)
                cond-mat.str-el cond-mat.supr-con

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