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      Ohmic contacts top‐GaAs withp+/pregrown structures formed by metalorganic molecular beam epitaxy

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Obtaining the specific contact resistance from transmission line model measurements

          G.K. Reeves, H.B. Harrison (1982)
          Article 0 comments Cited 159 times – based on 0 reviews     Review now
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            Electron tunneling and contact resistance of metal-silicon contact barriers

            A.Y.C. Yu (1970)
            Article 0 comments Cited 114 times – based on 0 reviews     Review now
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              Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

              Eisuke Tokumitsu, Motoya Miyauchi, Takumi Yamada … (1988)
              Article 0 comments Cited 59 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: June 1991
                Publication date (Print): June 1991
                Volume: 69
                Issue: 11
                Pages: 7939-7941
                Article
                DOI: 10.1063/1.347489
                SO-VID: 5b1e98c5-2b80-48ca-b384-26cc342434d4
                Copyright © © 1991
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