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      Lasing at the nanoscale: coherent emission of surface plasmons by an electrically driven nanolaser

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          Abstract

          Plasmonics offers a unique opportunity to break the diffraction limit of light and bring photonic devices to the nanoscale. As the most prominent example, an integrated nanolaser is a key to truly nanoscale photonic circuits required for optical communication, sensing applications and high-density data storage. Here, we develop a concept of an electrically driven subwavelength surface-plasmon-polariton nanolaser, which is based on a novel amplification scheme, with all linear dimensions smaller than the operational free-space wavelength λ and a mode volume of under λ 3/30. The proposed pumping approach is based on a double-heterostructure tunneling Schottky barrier diode and gives the possibility to reduce the physical size of the device and ensure in-plane emission so that the nanolaser output can be naturally coupled to a plasmonic or nanophotonic waveguide circuitry. With the high energy efficiency (8% at 300 K and 37% at 150 K), the output power of up to 100 μW and the ability to operate at room temperature, the proposed surface plasmon polariton nanolaser opens up new avenues in diverse application areas, ranging from ultrawideband optical communication on a chip to low-power nonlinear photonics, coherent nanospectroscopy, and single-molecule biosensing.

          Most cited references60

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          Plasmon lasers at deep subwavelength scale.

          Laser science has been successful in producing increasingly high-powered, faster and smaller coherent light sources. Examples of recent advances are microscopic lasers that can reach the diffraction limit, based on photonic crystals, metal-clad cavities and nanowires. However, such lasers are restricted, both in optical mode size and physical device dimension, to being larger than half the wavelength of the optical field, and it remains a key fundamental challenge to realize ultracompact lasers that can directly generate coherent optical fields at the nanometre scale, far beyond the diffraction limit. A way of addressing this issue is to make use of surface plasmons, which are capable of tightly localizing light, but so far ohmic losses at optical frequencies have inhibited the realization of truly nanometre-scale lasers based on such approaches. A recent theoretical work predicted that such losses could be significantly reduced while maintaining ultrasmall modes in a hybrid plasmonic waveguide. Here we report the experimental demonstration of nanometre-scale plasmonic lasers, generating optical modes a hundred times smaller than the diffraction limit. We realize such lasers using a hybrid plasmonic waveguide consisting of a high-gain cadmium sulphide semiconductor nanowire, separated from a silver surface by a 5-nm-thick insulating gap. Direct measurements of the emission lifetime reveal a broad-band enhancement of the nanowire's exciton spontaneous emission rate by up to six times owing to the strong mode confinement and the signature of apparently threshold-less lasing. Because plasmonic modes have no cutoff, we are able to demonstrate downscaling of the lateral dimensions of both the device and the optical mode. Plasmonic lasers thus offer the possibility of exploring extreme interactions between light and matter, opening up new avenues in the fields of active photonic circuits, bio-sensing and quantum information technology.
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            Surface Plasmon Amplification by Stimulated Emission of Radiation: Quantum Generation of Coherent Surface Plasmons in Nanosystems

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              Electrically pumped hybrid AlGaInAs-silicon evanescent laser.

              An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
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                Author and article information

                Journal
                Nanophotonics
                Walter de Gruyter GmbH
                2192-8614
                2192-8606
                July 20 2020
                July 20 2020
                : 9
                : 12
                : 3965-3975
                Affiliations
                [1 ]Laboratory of Nanooptics and Plasmonics, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russian Federation
                [2 ]Department of Physics and London Centre for Nanotechnology, King’s College London, Strand, London WC2R 2LS, UK
                Article
                10.1515/nanoph-2020-0157
                5b86e476-2fed-44bd-89e7-2ff8bbe2cdf9
                © 2020

                http://creativecommons.org/licenses/by/4.0

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