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      Measurement of the conduction‐band discontinuity in pseudomorphic InxGa1−xAs/In0.52Al0.48As heterostructures

      Author(s): , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Efficient band-structure calculations of strained quantum wells

          Shun Lien Chuang (1991)
          Article 0 comments Cited 117 times – based on 0 reviews     Review now
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            Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

            E.H. Snow, B.E. Deal, A.S. Grove … (1965)
            Article 0 comments Cited 96 times – based on 0 reviews     Review now
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              The electron effective mass in heavily doped GaAs

              C. Bernard, J. Robert, A. Raymond (1979)
              Article 0 comments Cited 67 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: February 10 1992
                Publication date (Print): February 10 1992
                Volume: 60
                Issue: 6
                Pages: 733-735
                Article
                DOI: 10.1063/1.106552
                SO-VID: 5bc5a616-0c1e-4c7c-be16-da07c3ab9fd4
                Copyright © © 1992
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