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      Enhanced power density of a supercapacitor by introducing 3D-interfacial graphene

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          Abstract

          The influence of 3D interfacial graphene on the capacitive performance of rGO-based supercapacitor has been studied, where the power density increase by 220%.

          Abstract

          Developing a supercapacitor with high power density has been considered one of the important directions to facilitate its real applications. Herein, by introducing three-dimensional (3D) interfacial graphene between active materials and the Ni collector, it is demonstrated that the power density can be improved by 220% and 48%, corresponding to the supercapacitors using microwave thermally-exfoliated reduced graphene oxide and solvothermal reduced graphene oxide as the active materials, respectively. The results show that the specific capacitance shows almost no obvious change, compared with using the pure Ni collector, indicating the negligible contribution of 3D interfacial graphene to the capacitor behavior. The electrochemical impedance spectroscopy analysis showed that the enhancement of power density was caused by the smaller charge transfer resistance attributed to the good conductivity and adhesion of the 3D interfacial graphene. This study demonstrates that the 3D interfacial graphene could facilitate the charge transport and is suitable for developing energy devices with high power density.

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          Author and article information

          Contributors
          Journal
          NJCHE5
          New Journal of Chemistry
          New J. Chem.
          Royal Society of Chemistry (RSC)
          1144-0546
          1369-9261
          August 10 2020
          2020
          : 44
          : 31
          : 13377-13381
          Affiliations
          [1 ]College of Materials Science and Engineering
          [2 ]Sichuan University
          [3 ]Chengdu 610065
          [4 ]China
          [5 ]Interdisciplinary Nanoscience Center
          [6 ]State Key Laboratory of Electronic Thin Films and Integrated Devices
          [7 ]University of Electronic Science and Technology of China
          [8 ]Chengdu 610054
          [9 ]Dongguan University of Technology
          [10 ]North Laser Research Institute Co. Ltd
          [11 ]Chengdu
          [12 ]Aarhus University
          [13 ]Aarhus 8000
          [14 ]Denmark
          Article
          10.1039/D0NJ02105A
          5c7cab69-80b0-4ddc-b781-9fc8723b2b5b
          © 2020

          http://rsc.li/journals-terms-of-use

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