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      GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer

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          An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

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            XPS characterisation of in situ treated lanthanum oxide and hydroxide using tailored charge referencing and peak fitting procedures

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              Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                1557-9646
                January 2018
                January 2018
                : 65
                : 1
                : 72-78
                Article
                10.1109/TED.2017.2777938
                5de10783-ef06-4cd9-9114-711a43457022
                © 2018
                History

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