For Publishers
DiscoveryMetadataPeer reviewHostingPublishing
For Researchers
JoinPublishReviewCollect
Register
Blog
About
Search
Advanced search
My ScienceOpen
Search
For Publishers
For Researchers
Blog
About
5
views
243
references
 Top references
cited by
18
    
0 reviews
 Review
0
comments
 Comment
0
recommends
+1 Recommend
0 collections
    0
    shares
      10
      similar
       All similar
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Miniaturization of CMOS

      review-article

      Read this article at

      ScienceOpenPublisherPMC
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

          Related collections

          Most cited references243

          • Record: found
          • Abstract: not found
          • Article: not found

          Cramming More Components Onto Integrated Circuits

          G.E. Moore (1998)
          Article 0 comments Cited 350 times – based on 0 reviews     Review now
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Field-effect transistors built from all two-dimensional material components.

            Tania Roy, Mahmut Tosun, Jeong Kang … (2014)
            We demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the source/drain and the top-gate contacts. This transistor exhibits n-type behavior with an ON/OFF current ratio of >10(6), and an electron mobility of ∼33 cm(2)/V·s. Uniquely, the mobility does not degrade at high gate voltages, presenting an important advantage over conventional Si transistors where enhanced surface roughness scattering severely reduces carrier mobilities at high gate-fields. A WSe2-MoS2 diode with graphene contacts is also demonstrated. The diode exhibits excellent rectification behavior and a low reverse bias current, suggesting high quality interfaces between the stacked layers. In this work, all interfaces are based on van der Waals bonding, presenting a unique device architecture where crystalline, layered materials with atomically uniform thicknesses are stacked on demand, without the lattice parameter constraints. The results demonstrate the promise of using an all-layered material system for future electronic applications.
            Article 0 comments Cited 189 times – based on 0 reviews     Review now
              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Anisotropic Etching of Crystalline Silicon in Alkaline Solutions

              R H Seidel (1990)
              Article 0 comments Cited 187 times – based on 0 reviews     Review now
                Bookmark
                All references

                Author and article information

                Journal
                Journal ID (nlm-ta): Micromachines (Basel)
                Journal ID (iso-abbrev): Micromachines (Basel)
                Journal ID (publisher-id): micromachines
                Title: Micromachines
                Publisher: MDPI
                ISSN (Electronic): 2072-666X
                Publication date (Electronic): 30 April 2019
                Publication date Collection: May 2019
                Volume: 10
                Issue: 5
                Electronic Location Identifier: 293
                Affiliations
                [1 ]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; hexiaobin@ 123456ime.ac.cn (X.H.); zhangqingzhu@ 123456ime.ac.cn (Q.Z.); liujinbiao@ 123456ime.ac.cn (J.L.); xiangjinjuan@ 123456ime.ac.cn (J.X.); kongzhenzhen@ 123456ime.ac.cn (Z.K.); xiongwenjuan@ 123456ime.ac.cn (W.X.); lijunjie@ 123456ime.ac.cn (J.L.); gaojianfeng@ 123456ime.ac.cn (J.G.); yanghong@ 123456ime.ac.cn (H.Y.); gushihai@ 123456ime.ac.cn (S.G.); zhaoxuewei@ 123456ime.ac.cn (X.Z.); duyong@ 123456ime.ac.cn (Y.D.); yujiahan@ 123456ime.ac.cn (J.Y.)
                [2 ]Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China
                [3 ]Department of Electronics Design, Mid Sweden University, Holmgatan 10, 85170 Sundsvall, Sweden
                [4 ]State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China
                [5 ]Fert Beijing Institute, Big Data Brain Computing (BDBC), Beihang University, Beijing 100191, China; cuihusan@ 123456ime.ac.cn
                [6 ]School of Artificial Intelligence, University of Chinese Academy of Sciences, Beijing 100049, China
                [7 ]School of Microelectronics, University of Science and Technology of China, Anhui 230026, China
                Author notes
                [* ]Correspondence: rad@ 123456ime.ac.cn (H.H.R.); wangguilei@ 123456ime.ac.cn (G.W.); Tel.: +86-010-8299-5793 (G.W.)
                [†]

                The authors have equally contributed in this article.

                Author information
                https://orcid.org/0000-0003-2860-5901
                Article
                Publisher ID: micromachines-10-00293
                DOI: 10.3390/mi10050293
                PMC ID: 6563067
                PubMed ID: 31052223
                SO-VID: 5fa92cc6-2197-451d-9398-f25e44dbf812
                Copyright © © 2019 by the authors.
                License:

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                Date received : 03 March 2019
                Date accepted : 11 April 2019
                Categories
                Subject: Review

                Keywords: finfets,cmos,device processing,integrated circuits
                Data availability:
                Keywords: finfets, cmos, device processing, integrated circuits

                Comments

                Comment on this article

                scite_

                Similar content10

                See all similar

                Cited by18

                See all cited by

                Most referenced authors2,755

                See all reference authors