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      Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

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      Journal of Applied Physics
      AIP Publishing

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            Oxygen vacancies and donor impurities in β-Ga2O3

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              Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 15 2011
                September 15 2011
                : 110
                : 6
                : 063720
                Article
                10.1063/1.3642962
                6000df01-931c-4e29-b764-848a5c830701
                © 2011
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