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The cutoff wavelength and minority‐carrier lifetime in implantedn+‐on‐bulkpHg1−xCdxTe photodiodes
Author(s):
Y. Nemirovsky
,
D. Rosenfeld
Publication date
Created:
April 1988
Publication date
(Print):
April 1988
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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7
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The exponential optical absorption band tail of Hg1−xCdxTe
S Schacham
,
E. Finkman
(1984)
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Electrical properties of shallow levels inp‐type HgCdTe
Y Nemirovsky
,
E. Finkman
(1986)
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Gate‐controlled Hg1−xCdxTe photodiodes passivated with native sulfides
I. Kidron
,
A. Kornfeld
,
R Adar
…
(1986)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
April 1988
Publication date (Print):
April 1988
Volume
: 63
Issue
: 7
Pages
: 2435-2439
Article
DOI:
10.1063/1.341039
SO-VID:
6040721b-e137-4fd2-b969-c3cebf3523a1
Copyright ©
© 1988
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