Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Fitzgerald, E. A.

doi:10.1116/1.586204

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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Author(s): E. A. Fitzgerald

Publication date (Print): July 1992

Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Publisher: American Vacuum Society

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Journal ID (publisher-id): JVTBD9

Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Abbreviated Title: J. Vac. Sci. Technol. B

Publisher: American Vacuum Society

ISSN (Print): 0734211X

Publication date (Print): July 1992

Volume: 10

Issue: 4

Page: 1807

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DOI: 10.1116/1.586204

SO-VID: 60e93e9f-f340-4cd8-9b5b-cc247628426b

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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

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