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      Electrical spin injection in a ferromagnetic semiconductor heterostructure

      , , , , ,
      Nature
      Springer Nature

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          Is Open Access

          Quantum Computation with Quantum Dots

          We propose a new implementation of a universal set of one- and two-qubit gates for quantum computation using the spin states of coupled single-electron quantum dots. Desired operations are effected by the gating of the tunneling barrier between neighboring dots. Several measures of the gate quality are computed within a newly derived spin master equation incorporating decoherence caused by a prototypical magnetic environment. Dot-array experiments which would provide an initial demonstration of the desired non-equilibrium spin dynamics are proposed.
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            Making nonmagnetic semiconductors ferromagnetic

            Ohno (1998)
            REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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              Magnetoelectronics

              Prinz (1998)
              An approach to electronics is emerging that is based on the up or down spin of the carriers rather than on electrons or holes as in traditional semiconductor electronics. The physical basis for the observed effects is presented, and the initial successful applications of this technology for information storage are reviewed. Additional opportunities for the exploitation of this technology, which are currently under study, are described.
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                Author and article information

                Journal
                Nature
                Nature
                Springer Nature
                0028-0836
                December 16 1999
                December 16 1999
                : 402
                : 6763
                : 790-792
                Article
                10.1038/45509
                60f0edea-5eb7-4c39-979c-d6426daea80d
                © 1999
                History

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