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      Orientations – perfectly colored

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      Journal of Applied Crystallography
      International Union of Crystallography (IUCr)

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          Abstract

          The inverse pole figure (IPF) coloring for a suitable evaluation of crystal orientation data is discussed. The major goal is a high correlation between encoding color and crystal orientation. Revised color distributions of the fundamental sectors are introduced which have the advantages of (1) being applicable for all point groups, (2) not causing color discontinuities within grains, (3) featuring carefully balanced regions for red, cyan, blue, magenta, green and yellow, and (4) an enlarged gray center in opposition to a tiny white center. A new set of IPF color keys is proposed which is the result of a thorough analysis of the colorization problem. The discussion considers several topics: ( a) the majority of presently applied IPF color keys generate color discontinuities for specifically oriented grains; ( b) if a unique correlation between crystal direction and color is requested, discontinuity-preventing keys are possible for all point groups, except for {\overline 4}, {\overline 3} and {\overline 1}; ( c) for a specific symmetry group several IPF color keys are available, visualizing different features of a microstructure; and ( d) for higher symmetries a simultaneous IPF mapping of two or three standard reference directions is insufficient for an unequivocal orientation assignment. All color keys are available in MTEX, a freely available MATLAB toolbox.

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          Texture Analysis with MTEX – Free and Open Source Software Toolbox

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            Many-beam dynamical simulation of electron backscatter diffraction patterns.

            We present an approach for the simulation of complete electron backscatter diffraction (EBSD) patterns where the relative intensity distributions in the patterns are accurately reproduced. The Bloch wave theory is applied to describe the electron diffraction process. For the simulation of experimental patterns with a large field of view, a large number of reflecting planes has to be taken into account. This is made possible by the Bethe perturbation of weak reflections. Very good agreement is obtained for simulated and experimental patterns of gallium nitride GaN{0001} at 20kV electron energy. Experimental features like zone-axis fine structure and higher-order Laue zone rings are accurately reproduced. We discuss the influence of the diffraction of the incident beam in our experiment.
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              Chirality determination of quartz crystals using Electron Backscatter Diffraction

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                Author and article information

                Journal
                JACGAR
                Journal of Applied Crystallography
                J Appl Crystallogr
                J Appl Cryst
                International Union of Crystallography (IUCr)
                1600-5767
                October 2016
                September 29 2016
                October 01 2016
                : 49
                : 5
                : 1786-1802
                Article
                10.1107/S1600576716012942
                6146bbae-58f9-48c2-864b-c7c7b712fdcf
                © 2016

                http://journals.iucr.org/services/copyrightpolicy.html

                http://journals.iucr.org/services/copyrightpolicy.html#TDM

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