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New approach to the high quality epitaxial growth of lattice‐mismatched materials
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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
J. C. Bean, R. People (1985)
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A new dielectric isolation method using porous silicon
Kazuo Imai (1981)
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Molecular Beam Epitaxy of GexSi1-x/(Si Ge) Strained-Layer Heterostructures and Superlattices
J. P. BEAN, J. F. Bean (1984)