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New approach to the high quality epitaxial growth of lattice‐mismatched materials
Author(s):
Serge Luryi
,
Ephraim Suhir
Publication date
Created:
July 21 1986
Publication date
(Print):
July 21 1986
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
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Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
J. C. Bean
,
R. People
(1985)
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A new dielectric isolation method using porous silicon
Kazuo Imai
(1981)
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Molecular Beam Epitaxy of GexSi1-x/(Si Ge) Strained-Layer Heterostructures and Superlattices
J. P. BEAN
,
J. F. Bean
(1984)
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Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
July 21 1986
Publication date (Print):
July 21 1986
Volume
: 49
Issue
: 3
Pages
: 140-142
Article
DOI:
10.1063/1.97204
SO-VID:
61dbc5e4-5a37-4cd0-8765-55e1409c9166
Copyright ©
© 1986
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