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1,984
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Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
Author(s):
A.S. Grove
,
B.E. Deal
,
E.H. Snow
,
C.T. Sah
Publication date
Created:
February 1965
Publication date
(Print):
February 1965
Journal:
Solid-State Electronics
Publisher:
Elsevier BV
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Paul Drude Institute for Solid State Electronics (PDI)
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19
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An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
L.M. Terman
(1962)
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Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon
F. Allen
,
G. W. Gobeli
(1962)
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Physical Theory of Semiconductor Surfaces
C. Garrett
,
W. Brattain
(1955)
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Author and article information
Journal
Title:
Solid-State Electronics
Abbreviated Title:
Solid-State Electronics
Publisher:
Elsevier BV
ISSN (Print):
00381101
Publication date Created:
February 1965
Publication date (Print):
February 1965
Volume
: 8
Issue
: 2
Pages
: 145-163
Article
DOI:
10.1016/0038-1101(65)90046-8
SO-VID:
6288c331-a85b-49bc-ac86-26af6017d973
Copyright ©
© 1965
License:
http://www.elsevier.com/tdm/userlicense/1.0/
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