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      Local deformations and incommensurability of high quality epitaxial graphene on a weakly interacting transition metal

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          Abstract

          We investigate the fine structure of graphene on iridium, which is a model for graphene weakly interacting with a transition metal substrate. Even the highest quality epitaxial graphene displays tiny imperfections, i.e. small biaxial strains, ca. 0.3%, rotations, ca. 0.5^{\circ}, and shears over distances of ca. 100 nm, and is found incommensurate, as revealed by X-ray diffraction and scanning tunneling microscopy. These structural variations are mostly induced by the increase of the lattice parameter mismatch when cooling down the sample from the graphene preparation temperature to the measurement temperature. Although graphene weakly interacts with iridium, its thermal expansion is found positive, contrary to free-standing graphene. The structure of graphene and its variations are very sensitive to the preparation conditions. All these effects are consistent with initial growth and subsequent pining of graphene at steps.

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          Bandgap opening in graphene induced by patterned hydrogen adsorption.

          Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices. The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication. However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice, but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moiré superlattice positions of graphene grown on an Ir(111) substrate.
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            Direct observation of electron confinement in epitaxial graphene nanoislands.

            One leading question for the application of graphene in nanoelectronics is how electronic properties depend on the size at the nanoscale. Direct observation of the quantized electronic states is central to conveying the relationship between electronic structures and local geometry. Scanning tunneling spectroscopy was used to measure differential conductance dI/dV patterns of nanometer-size graphene islands on an Ir(111) surface. Energy-resolved dI/dV maps clearly show a spatial modulation, indicating a modulated local density of states due to quantum confinement, which is unaffected by the edge configuration. We establish the energy dispersion relation with the quantized electron wave vector obtained from a Fourier analysis of dI/dV maps. The nanoislands preserve the Dirac Fermion properties with a reduced Fermi velocity.
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              Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

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                Author and article information

                Journal
                2012-06-26
                2012-11-07
                Article
                10.1103/PhysRevB.86.235439
                1206.5920
                64708e05-5e24-49b6-914e-3a74ac96c571

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Physical Review B (Condensed Matter) 86 (2012) 235439
                cond-mat.mtrl-sci
                ccsd

                Condensed matter
                Condensed matter

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