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      Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg 1− x Cd x Te

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          Abstract

          Terahertz photoconductivity in heterostructures based on n-type Hg 1− x Cd x Te epitaxial films both in the topological phase ( x < 0.16, inverted band structure, zero band gap) and the trivial state ( x > 0.16, normal band structure) has been studied. We show that both the positive photoresponse in films with x < 0.16 and the negative photoconductivity in samples with x > 0.16 have no low-energy threshold. The observed non-threshold positive photoconductivity is discussed in terms of a qualitative model that takes into account a 3D potential well and 2D topological Dirac states coexisting in a smooth topological heterojunction.

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          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
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            Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

            We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness \(d_c\). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.
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              Quantum Spin Hall Insulator State in HgTe Quantum Wells

              Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
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                Author and article information

                Contributors
                Role: Guest Editor
                Journal
                Beilstein J Nanotechnol
                Beilstein J Nanotechnol
                Beilstein Journal of Nanotechnology
                Beilstein-Institut (Trakehner Str. 7-9, 60487 Frankfurt am Main, Germany )
                2190-4286
                2018
                29 March 2018
                : 9
                : 1035-1039
                Affiliations
                [1 ]Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory 1 bld.2, 119991 Moscow, Russia
                [2 ]Faculty of Physics, University of Regensburg, Universitaetstr. 31, D-93053 Regensburg, Germany
                [3 ]Rzhanov Institute of Semiconductor Physics, pr. Lavrentieva 13, 630090 Novosibirsk, Russia
                [4 ]Chemistry Department, M.V. Lomonosov Moscow State University, Leninskie Gory 1 bld.3, 119991 Moscow, Russia
                [5 ]P.N. Lebedev Physical Institute, Leninskiy prosp. 53, 119991 Moscow, Russia
                Author information
                http://orcid.org/0000-0002-1295-5598
                http://orcid.org/0000-0003-2292-117X
                Article
                10.3762/bjnano.9.96
                5905285
                65612047-3d73-4781-808c-65b37769cf14
                Copyright © 2018, Galeeva et al.; licensee Beilstein-Institut.

                This is an Open Access article under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano)

                History
                : 8 December 2017
                : 2 March 2018
                Categories
                Letter
                Nanoscience
                Nanotechnology

                terahertz radiation,topological insulator,photoconductivity

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