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      Metamorphic III–V semiconductor lasers grown on silicon

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          Abstract

          Abstract

          The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling technology for full-scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated sensing systems operating in the mid-infrared (MIR) regime of the spectrum. In this article, we review recent developments, through several approaches, in the direct metamorphic epitaxial growth of various III–V materials-based lasers on silicon substrates. We show that GaAs-based 1.3-μm III–V quantum dot lasers and GaSb-based MIR quantum-well lasers grown on silicon substrates can operate with low threshold current density and high operating temperature, which hold promise for the future.

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          Most cited references44

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          Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

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            Silicon Photonics

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              Lasing in direct-bandgap GeSn alloy grown on Si

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                Author and article information

                Journal
                applab
                MRS Bulletin
                MRS Bull.
                Cambridge University Press (CUP)
                0883-7694
                1938-1425
                March 2016
                March 14 2016
                March 2016
                : 41
                : 03
                : 218-223
                Article
                10.1557/mrs.2016.24
                65b4ff05-be02-4f0b-b866-9778e35f1da3
                © 2016
                History

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