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      Dielectric properties of thin film Al/Sb2Pb1Se7/Al devices

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      Brazilian Journal of Physics
      Sociedade Brasileira de Física

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          Abstract

          Metal - glass metal, MGM, thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The capacitance and the loss tangent variation as a function of temperature and frequency is studied. The observed characteristics are explained using small signal ac circuit analysis. It is shown that the theoretical curve generated using the ac circuit analysis gives excellent fitting with the experimental curve.

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          Most cited references5

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          Handbook of Chemistry and Physics

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            Handbook of Thin Film Technology

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              Dielectric Behaviour and Structure

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                Author and article information

                Journal
                bjp
                Brazilian Journal of Physics
                Braz. J. Phys.
                Sociedade Brasileira de Física (São Paulo, SP, Brazil )
                0103-9733
                1678-4448
                2000
                : 30
                : 3
                : 554-559
                Affiliations
                [01] Mumhai orgnameThe Institute of Science orgdiv1Department of Physics orgdiv2Solid State Electronics Laboratory India
                Article
                S0103-97332000000300012 S0103-9733(00)03000312
                10.1590/S0103-97332000000300012
                66230ca2-930f-4129-b1db-23e72c948e88

                This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

                History
                : 20 January 2000
                : 09 May 2000
                Page count
                Figures: 0, Tables: 0, Equations: 0, References: 20, Pages: 6
                Product

                SciELO Brazil

                Categories
                Regular Articles

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