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      Recent advances in joining of SiC-based materials (monolithic SiC and SiC f/SiC composites): Joining processes, joint strength, and interfacial behavior

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          Abstract

          Silicon carbide (SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resistance; as a result, the SiC-based materials have been or are being widely used in most advanced fields involving aerospace, aviation, military, and nuclear power. Joining of SiC-based materials (monolithic SiC and SiC f/SiC composites) can resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness. Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes (involving joining techniques and parameter conditions), joint strength, interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.

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          Author and article information

          Journal
          J Adv Ceram
          Journal of Advanced Ceramics
          Tsinghua University Press and Springer-Verlag Berlin Heidelberg (USA )
          2227-8508
          2226-4108
          01 March 2019
          01 October 2019
          : 8
          : 1
          : 19-38
          Affiliations
          aSchool of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
          bState Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
          Author notes
          *Corresponding author: Guiwu LIU, E-mail: gwliu76@ 123456ujs.edu.cn
          Article
          s40145-018-0297-x
          10.1007/s40145-018-0297-x
          Copyright © The Author(s)

          This is an open-access article distributed under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited. See https://creativecommons.org/licenses/by/4.0/.

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