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# Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers

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### Abstract

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral N\'eel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co$$_{20}$$Fe$$_{60}$$B$$_{20}$$/MgO the DMI may be influenced by annealing. We find that the DMI peaks at $$D=0.057\pm0.003$$ mJ/m$$^{2}$$ at an annealing temperature of 230 $$^{\circ}$$C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.

### Most cited references33

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Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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### Author and article information

###### Journal
2016-07-21
1607.06405
10.1063/1.4963731

5 pages and 4 figures
cond-mat.mes-hall

Nanophysics