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      Enhanced Photoluminescence of Solution-Exfoliated Transition Metal Dichalcogenides by Laser Etching

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          Abstract

          Using a conventional Raman experimental apparatus, we demonstrate that the photoluminescent (PL) yield from ultrasonication-exfoliated transition metal dichalcogenides (TMDs) (MoS 2 and WS 2) can be increased by up to 8-fold by means of a laser etching procedure. This laser etching process allows us to controllably pattern and reduce the number of layers of the solution-exfoliated material, overcoming the key drawback to solvent-based exfoliation of two-dimensional (2D) semiconducting materials for applications in optoelectronics. The successful laser thinning of the exfoliated 2D crystals was investigated systematically by changes in both Raman and PL spectra. A simple proof-of-principle of the scalability of this laser etching technique for solution-exfoliated TMD crystals was also demonstrated. As well as being applicable for individual materials, it is also possible to use this simple laser etching technique to investigate the structure of solution-generated van der Waals heterostructures, consisting of layers of both MoS 2 and WS 2.

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          Emerging photoluminescence in monolayer MoS2.

          Andrea Splendiani, Liang Sun, Yuanbo Zhang … (2010)
          Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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            Anomalous lattice vibrations of single- and few-layer MoS2.

            Changgu Lee, Hugen Yan, Louis E Brus … (2010)
            Molybdenum disulfide (MoS(2)) of single- and few-layer thickness was exfoliated on SiO(2)/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E(1)(2g) and A(1g), exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime.
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              High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

              Kibum Kang, Saien Xie, Lujie Huang … (2015)
              The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.
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                Author and article information

                Journal
                Journal ID (nlm-ta): ACS Omega
                Journal ID (iso-abbrev): ACS Omega
                Journal ID (publisher-id): ao
                Journal ID (coden): acsodf
                Title: ACS Omega
                Publisher: American Chemical Society
                ISSN (Electronic): 2470-1343
                Publication date (Electronic): 28 February 2017
                Publication date Collection: 28 February 2017
                Volume: 2
                Issue: 2
                Pages: 738-745
                Affiliations
                [1] †School of Materials and ‡School of Chemistry, University of Manchester , Oxford Road, M13 9PL Manchester, U.K.
                Author notes
                Article
                DOI: 10.1021/acsomega.6b00294
                PMC ID: 6641068
                PubMed ID: 31457468
                SO-VID: 6790aca9-e446-467f-b5d8-4d4c407869c3
                Copyright © Copyright © 2017 American Chemical Society
                License:

                This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.

                History
                Date received : 06 October 2016
                Date accepted : 26 December 2016
                Categories
                Subject: Article
                Custom metadata
                document-id-old-9 ao6b00294
                document-id-new-14 ao-2016-00294c
                ccc-price

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