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      Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

      Author(s): , , , , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Band parameters for nitrogen-containing semiconductors

          I Vurgaftman, J R Meyer (2003)
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            Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

            Gerd O. Mueller, Ling Zhou, Gerard Harbers … (2007)
            Article 0 comments Cited 323 times – based on 0 reviews     Review now
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              Auger recombination in InGaN measured by photoluminescence

              Linda Y C Shen, G. O. Mueller, S. Watanabe … (2007)
              Article 0 comments Cited 306 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: February 04 2008
                Publication date (Print): February 04 2008
                Volume: 92
                Issue: 5
                Page: 053502
                Article
                DOI: 10.1063/1.2839305
                SO-VID: 67a77338-1022-462e-b853-1ab33fabfe93
                Copyright © © 2008
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