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      Dependence of Tunnel Magnetoresistance Effect on Fe Thickness of Perpendicularly Magnetized L1$_{0}$-Mn$_{62}$Ga$_{38}$/Fe/MgO/CoFe Junctions

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          Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions.

          The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studied for device applications, exhibit a magnetoresistance ratio up to 70% at room temperature. This low magnetoresistance seriously limits the feasibility of spintronics devices. Here, we report a giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs. The origin of this enormous TMR effect is coherent spin-polarized tunnelling, where the symmetry of electron wave functions plays an important role. Moreover, we observed that their tunnel magnetoresistance oscillates as a function of tunnel barrier thickness, indicating that coherency of wave functions is conserved across the tunnel barrier. The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM.
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            Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier

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              Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

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                Author and article information

                Journal
                APEPC4
                Applied Physics Express
                Appl. Phys. Express
                Japan Society of Applied Physics
                1882-0778
                1882-0786
                April 2012
                March 29 2012
                : 5
                : 4
                : 043003
                10.1143/APEX.5.043003
                © 2012
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