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      Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Physics Letters A
      Publisher: Elsevier BV

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          Journal
          Title: Physics Letters A
          Abbreviated Title: Physics Letters A
          Publisher: Elsevier BV
          ISSN (Print): 03759601
          Publication date Created: May 2018
          Publication date (Print): May 2018
          Volume: 382
          Issue: 17
          Pages: 1181-1184
          Article
          DOI: 10.1016/j.physleta.2018.02.035
          SO-VID: 6996b51b-b9a4-48fc-a602-62f761016104
          Copyright © © 2018
          License:

          https://www.elsevier.com/tdm/userlicense/1.0/

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