X-ray diffraction imaging of metal–oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams

Abstract

Metal-oxide tunnel junctions made by optical lithography were studied by X-ray diffraction (imaging approach with diffraction contrast) to access local distortions of the crystalline planes of the constituting layers. The effect of the size (10–150 µm) and shape (disc, square and rectangle) of the junction was investigated.

Abstract

X-ray diffraction techniques are used in imaging mode in order to characterize micrometre-sized objects. The samples used as models are metal–oxide tunnel junctions made by optical lithography, with lateral sizes ranging from 150 µm down to 10 µm and various shapes: discs, squares and rectangles. Two approaches are described and compared, both using diffraction contrast: full-field imaging (topography) and raster imaging (scanning probe) using a micrometre-sized focused X-ray beam. It is shown that the full-field image gives access to macroscopic distortions ( e.g. sample bending), while the local distortions, at the micrometre scale ( e.g. tilts of the crystalline planes in the vicinity of the junction edges), can be accurately characterized only using focused X-ray beams. These local defects are dependent on the junction shape and larger by one order of magnitude than the macroscopic curvature of the sample.